GaN Semiconductor Devices Market Press Release 2017

Progressive Markets has published a report, titled, “Global GaN Semiconductor Devices Market – Size, Trend, Share, Opportunity Analysis & Forecast, 2014–2025.” As per the report, the global GaN semiconductor devices market is expected to register a CAGR of 27.2% from 2017 to 2025. The report provides insights on key segments, discusses changing market dynamics, outlines recent developments, and highlights lucrative opportunities in coming years. Market players are able to gain exceptional results with the help of insights presented in the study. Moreover, it helps investors to gain improved profitability on investments. The research is helpful to provide detailed understanding of the global scenario, plan for growth, and gain impressive asset base in the global industry.

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An executive summary of the global GaN semiconductor devices market is provided in the report to help leading market players, new entrants, and investors determine a market overview and take steps for growth in the future. Key findings are offered in the study in terms of key investment pockets & top winning strategies. Market attractiveness is highlighted on the basis of short-term and long-term strategies to gain maximum profitability. Current market trends are discussed in the study along with development status of the industry. Competitive landscape of the global industry is provided to assist market players gain detailed information on competitive intensity in the market and devise strategies to gain competitive advantage. Research methodology is offered in the research in terms of primary and secondary research methods used to gather data.

Market landscape of the global GaN semiconductor devices industry is offered based on drivers and restraints. More efficient operation in applications at existing frequencies over other semiconductor devices, increase in demand for electric vehicle, and rise in need for high voltage operating devices are factors that fuel growth in the industry. Preference of silicon carbide (Sic) in high-voltage semiconductor applications limit growth in the global market. Porter’s Five Forces Analysis (PFFA) is provided in the research based on bargaining power of buyers, bargaining power of suppliers, threat from substitutes, threat of new entrants, and industrial rivalry. This analysis is helpful to develop strategies for business to reach recurring growth and determine competitive level.

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The report offers detailed segmentation of the global GaN semiconductor devices market based on type, application, devices, and geography. Based on type, the market is classified into power semiconductor and opto semiconductor. Based on application, the market is segmented into medical, automotive, aerospace, defense, and consumer electronics. Based on devices, the market is divided into rectifier, transistor, diodes, and power IC. Geographically, it is divided across North America, Europe, Asia-Pacific, and LAMEA. In-depth analysis of market share for each segment is offered for the historic period, 2014–2016 and the forecast period, 2017–2025 using tables and figures. Moreover, revenue generated by each segment is offered in the research with the help of tabular and graphical format.

The research offers a detailed analysis of key manufacturers operating in the global GaN semiconductor devices industry. An overview of business of each manufacturer is provided in the research to help market players, investors, new entrants, and stakeholders to determine further steps to be taken to achieve growth in the future along with investment feasibility. Financial and business segments of each market player are explored in the study. Moreover, recent developments are highlighted in the report. Key market players analyzed in the research include RF Micro Devices Incorporated, Toshiba Corp., Fujitsu Ltd., Cree Incorporated, Texas Instruments Inc., Mitsubishi Chemical Corporation, Aixtron SE, GaN Systems Inc., Koninklijke Philips N.V., and Epigan NV. This information assist them to determine level of competition in the global market and adopt strategies for growth including agreements, partnerships, collaborations, mergers & acquisitions, and others to make the mark across the world.

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Table of Content for GaN Semiconductor Devices Industry

  1. Executive summary
    1.1. Key Findings
    1.2. Market Attractiveness and Trend analysis
    1.3. Competitive Landscape and recent industry development analysis
  2. Introduction
    2.1. Report Description
    2.2. Scope and Definitions
    2.3. Research Methodology
  3. Market landscape
    3.1. Growth Drivers
    3.1.1. Impact Analysis
    3.2. Restrains and Challenges
    3.2.1. Impact Analysis
    3.3. Porter’s Analysis
    3.3.1. Bargaining power of buyers
    3.3.2. Bargaining power of suppliers
    3.3.3. Threat of substitutes
    3.3.4. Industry rivalry
    3.3.5. Threat of new entrants
    3.4. Global GaN Semiconductor Devices Market Shares Analysis, 2014-2025
    3.4.1. Global GaN Semiconductor Devices Market Share by technology, 2014-2025


List of Tables

Contain 41 Tables


List of Figures

Contain 49 Figures


About Progressive

The company makes use of primary corporate research and secondary inputs from trusted sources to build its own reference base. It maintains consistency in quality as it keeps itself updated with changes in market dynamics and gauging its net effect on global business trends.

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