Global GaN Semiconductor Devices Market – Industry Size, Share, Growth, Trends and Forecast 2016 – 2024

“The Latest Research Report GaN Semiconductor Devices Market – Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 – 2024 provides information on pricing, market analysis, shares, forecast, and company profiles for key industry participants. – MarketResearchReports.biz”

As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors. The wide band gap semiconductor technology has matured rapidly over several years. In fact, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) have been available as commercial off-the-shelf devices since 2005. Recently, the IMEC (Interuniversity Microelectronics Center) in Europe organized a “GaN-on-Si research program” in order to produce an 8 inch GaN-on-Si wafer. However, fully-fledged application of GaN semiconductor devices is still in the nascent stage as compared to silicon semiconductor devices that have been around for more than a decade.

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The GaN semiconductors devices market is primarily being driven by factors such as advancement in technology coupled with the expansion in the application areas for GaN based devices. There has been a rapid advancement in the GaN technology as a result of which various companies are coming up with new innovative products that are cost-effective and have better design and performance. Moreover, in order to address the growing demand for high power and high temperature applications there has been an increase in the usage of GaN semiconductor devices. Compared to Silicon (Si) and Gallium Arsenide (GaAs), gallium nitride is a robust technology and possesses better performance characteristics. GaN semiconductor devices offer high breakdown voltages, saturation velocity, high electron mobility and high thermal conductivity among others. This has enabled the implementation of GaN on a wide basis high frequency RF devices and LEDs. These factors in combination are expected to positively impact the growth of the GaN semiconductor devices globally.

However one of the major restraints of the GaN semiconductor devices market is the high production cost of pure Gallium nitride as compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. The various costs involved in the production of GaN devices include cost of substrate, fabrication, packaging, support electronics and development. Thus, high cost is one of the major challenges in the commercialization of GaN based devices. Though producing GaN in large volumes can help overcome these issues, currently, there is no widespread adopted method for growing GaN in bulk due to high operating pressures and temperatures, low material quality and limited scalability.

The competitive profiling of the key players in the global Gan semiconductor devices market and their market shares across four regions which include North America, Europe, Asia Pacific and Rest of the World (RoW) have been exhaustively covered under the purview of the study. Moreover, the distinct business strategies that have been adopted by the major players in the market have also been included in the report.

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A comprehensive analysis of market dynamics, which include the market drivers, restraints and opportunities, is included under the scope of the report. Market dynamics are the distinctive factors that influence the growth of the specific market and therefore help to study the current trends in the global market. Additionally, list of top GaN based IC manufacturers have also been included under the scope of the research. Thus, this report provides an inclusive study of the global GaN semiconductor devices market and also provides the forecast of the market for the period from 2016-2024.

Some of the major players in the market are: Mersen S.A., Avogy, Inc., Fujitsu Limited, GaN Systems Inc., Cree Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Toshiba Corporation, Everlight Electronics Co. and Efficient Power Conversion Corporation

The global GaN semiconductor devices market has been segmented into:

Global GaN semiconductor devices market, by Products

Power Semiconductors

GaN Radio Frequency Devices

Opto-semiconductors

Global GaN semiconductor devices market, by Wafer Size: The market is broadly segmented on the basis of wafer size into:

2 inch

4 inch

6 inch

8 inch

Global GaN semiconductor devices market, by Application: The market is broadly segmented on the basis of application into:

Information and Communication Technology

Automotive

Consumer Electronics

Defense and Aerospace

Others

Global GaN semiconductor devices market, by Geography: The market is broadly segmented on the basis of geography into:

North America

Europe

Asia Pacific

Rest of the World

Table of content

Chapter 1 Preface

1.1 Report description

1.2 Research scope

1.3 Research methodology

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Chapter 2 Executive Summary

CHAPTER 3 Global GaN Semiconductor Devices Market Analysis, 2015 – 2024 (Revenue in USD)

3.1 Overview

3.2 Key Trend Analysis

3.3 Comparison between GaN and IGBT

3.4 List of top GaN based IC manufacturers

3.4.1 Plessey Semiconductors Limited

3.4.1.1 Business Description

3.4.1.2 Type of IC offerings

3.4.2 Texas Instruments Inc.

3.4.2.1 Business Description

3.4.2.2 Type of IC offerings

3.5 Comparison of GaN semiconductor devices revenue of TMR and other research firms

3.6 Market Dynamics

3.6.1 Market Drivers

3.6.1.1 Advancement in technology

3.6.1.2 Expansion in the application areas for GaN based devices

3.6.1.3 Requirement of enhanced battlefield performance

3.6.1.4 Improving economic conditions

3.6.2 Restraints

3.6.2.1 High cost

3.6.3 Opportunities

3.6.3.1 Advent of Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)

3.7 Global GaN Semiconductor Devices Market Analysis, By Products, 2015 – 2024

3.7.1 Overview

3.7.1.1 Global GaN Semiconductor Devices Market Revenue Growth, By Products, 2015 –2024

3.7.1.2 Global GaN Semiconductor Devices Market Revenue Share (%), By Products, 2015 –2024

3.7.2 Power Semiconductors

3.7.2.1 Overview

3.7.2.1.1 Global GaN based power semiconductor Market by Application, Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.2 Schottky Diode

3.7.2.2.1 Global GaN based Schottky Diode Market for Power Semiconductors Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.2.2 Global GaN based Schottky Diode Market for Power Semiconductors, by Application, Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.3 High Electron Mobility Transistors (HEMTs)

3.7.2.3.1 Global High Electron Mobility Transistors (HEMTs) Market for Power Semiconductors Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.3.1 Global High Electron Mobility Transistors (HEMTs) Market for Power Semiconductor, by application Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.4 Integrated Circuit (IC)

3.7.2.4.1 Global GaN Integrated Circuit (IC) Market for Power Semiconductors Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.4.2 Global GaN IC Market for Power Semiconductor, by application Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.2.5 Global GaN on Si for Power Semiconductors, Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.3 GaN radio frequency (RF) devices

3.7.3.1 High Electron Mobility Transistors (HEMTs)

3.7.3.1.1 Global High Electron Mobility Transistors (HEMTs) Market for RF Devices Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.3.2 GaN based Integrated Circuit (IC)

3.7.3.2.1 Global GaN based Integrated Circuit (IC) Market for RF Devices Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.3.2.2 Global GaN based RF devices Market, by application Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.3.3 Global GaN on Si for GaN Radio Frequency Devices, Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.4 GaN based Opto semiconductors

3.7.4.1 Global GaN based Opto Semiconductors Market, Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.4.2 Global GaN on Si Market for Opto Semiconductors, Revenue and Forecast, 2015 – 2024 (USD Million)

3.7.4.3 GaN LED Lighting Market

3.7.4.3.1 Global GaN based opto semiconductors Market, by application Revenue and Forecast, 2015 – 2024 (USD Million)

3.8 Global GaN Semiconductor Devices Market Analysis, By Wafer Size, 2015 – 2024

3.8.1 Overview

3.8.1.1 Global GaN Semiconductor Devices Market Revenue Growth, By Wafer Size, 2015 –2024

3.8.1.2 Market Share, 2015 – 2024 (%)

3.8.2 2 inch wafer size

3.8.1 4 inch wafer size

3.8.2 6 inch wafer size

3.8.3 8 inch wafer size

3.8.4 Price Analysis, By Wafer Size, 2015 – 2024

3.8.4.1 Global GaN on SiRaw Wafer Revenue, By Size, Revenue and Forecast, 2015 – 2024 (USD Million)

3.9 Global GaN Semiconductor Devices Market Analysis, By Application, 2015 – 2024

3.9.1 Overview

3.9.1.1 Global GaN Semiconductor Devices Market Revenue Growth, By Application, 2015 –2024

3.9.1.2 Market Share, 2015 – 2024 (%)

3.9.2 Information and Communication Technology

3.9.3 Automotive

3.9.4 Consumer Electronics

3.9.5 Defense and Aerospace

3.9.6 Others

3.10 Competitive landscape

3.10.1 Market positioning of key players, 2015

3.10.2 Competitive strategies adopted by leading players

3.10.1 Recommendations

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